New PDF release: Fundamentals of Modern VLSI Devices

By Yuan Taur

ISBN-10: 0521832942

ISBN-13: 9780521832946

Study the fundamental houses and designs of recent VLSI units, in addition to the standards affecting functionality, with this completely up to date moment version. the 1st version has been generally followed as a customary textbook in microelectronics in lots of significant US universities and around the globe. The internationally-renowned authors spotlight the complicated interdependencies and refined tradeoffs among quite a few essentially vital equipment parameters, and in addition offer an in-depth dialogue of machine scaling and scaling limits of CMOS and bipolar units. Equations and parameters supplied are checked always opposed to the truth of silicon information, making the e-book both priceless in functional transistor layout and within the school room. each bankruptcy has been up to date to incorporate the most recent advancements, comparable to MOSFET scale size conception, high-field delivery version, and SiGe-base bipolar units.

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Extra resources for Fundamentals of Modern VLSI Devices

Example text

In a narrow-base diode, it takes a time equal to the base-transit time to fill the base with minority carriers. It should be noted that the charging current, In(x''' 0), is different for wide-base and narrow-base diodes. The dependence ofIn(x '" 0) on base width is shown in Fig. 22. 2 Average Time for Traversing a Narrow Base From Eq. tration at any base region is (I - np - npo = (np x in the narrow p-type ~). 148) Let vex) be the apparent velocity of these excess carriers at point x.

QDnn; ppOLn 123) (reverse, wide base). carrier concentration and the minority-carrier cur­ depletion-region boundary diffuse towards the depletion region, with a saturation current rent increase exponentially with the applied voltage (see Fig. 20). 129) which is independent of the base width. , » kT. In this case, Eqs. 6 Narrow-Base n+-p Diodes A diode is called narrow-base if its base width is small compared to the minority-carrier diffusion length in the base. In this case, this means Wp / Ln « L For a forward-biased narrow-base diode, Eqs.

The width of the emitter region of a p-n diode is also referred to as the junction depth. Therefore, a shallow-emitter diode is also a p-n junction having an electrically shallow junction. 22 applies to the emitter region as well. Thus, we see from Fig. 22 that when WIL < I in the emitter, the minority-carrier current in the emitter increases very rapidly as the emitter depth decreases. As can be inferred from Fig. 3 11m for a doping concentration of I x IOZo em- 3 , and much larger for lower doping concentrations.

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Fundamentals of Modern VLSI Devices by Yuan Taur


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