Read e-book online Handbook of Thin Film Devices PDF

By Maurice H. Francombe (Auth.)

ISBN-10: 0122653203

ISBN-13: 9780122653209

Content material:
Foreword and ebook Plan

, Pages v-vii
Preface for quantity I

, Pages xi-xii
Preface for quantity II

, Pages xiii-xiv
Preface for quantity III

, Pages xi-xii
Preface for quantity IV

, Pages xi-xii
Preface for quantity V

, Pages xi-xiii
List of participants for quantity I

, Pages xv-xvi
List of members for quantity II

, Pages xiii-xiv
List of participants for quantity III

, Page xiii
List of individuals for quantity IV

, Page xiii
List of individuals for quantity V

, Page xv
Chapter 1 - Epitaxial movie progress and Characterization

, Pages 1-53,I-II
Chapter 2 - Processing of Epitaxial Heterostructure Devices

, Pages 55-102
Chapter three - box impression Transistors: FETs and HEMTs

, Pages 103-156
Chapter four - Heterojunction Bipolar Transistors

, Pages 157-192
Chapter five - Gan-Based Modulation-Doped Field-Effect Transistors and Ultraviolet Detectors

, Pages 193-216
Chapter 6 - Silicon Germanium Alloy Devices

, Pages 217-248
Chapter 7 - Silicon Carbide energy Devices

, Pages 249-298
Chapter eight - GaN-Based Pyroelectronics and Piezoelectronics

, Pages 299-339
Chapter 1 - HgCdTe Infrared Detectors

, Pages 1-25
Chapter 2 - Antimony-Based Infrared fabrics and Devices

, Pages 27-62
Chapter three - Quantum good Infrared Photodetectors (QWIP)

, Pages 63-99
Chapter four - An creation to the Physics of Quantum good Infrared Photodetectors and different similar New Devices

, Pages 101-134
Chapter five - Semiconductor Photoemissive constructions for much Infrared Detection

, Pages 135-170
Chapter 6 - Interband III-V Mid-IR Semiconductor Lasers

, Pages 171-193
Chapter 7 - High-Performance Quantum Cascade Laser

, Pages 195-224
Chapter eight - InGaN-Based UV/Blue/Green LED and LD Structure

, Pages 225-263
Chapter nine - Plasma Displays

, Pages 265-283,III-IV
Chapter 10 - Liquid Crystal Displays

, Pages 285-309
Chapter eleven - contemporary Advances in skinny movie sun Cells

, Pages 311-362
Chapter 1 - Synthesis and Characterization of Superconducting skinny Films

, Pages 1-33
Chapter 2 - Fabrication of Superconducting units and Circuits

, Pages 35-69
Chapter three - electronic recommendations and Applications

, Pages 71-98
Chapter four - Superconducting Microwave gadget houses and Applications

, Pages 99-123
Chapter five - Detectors for Infrared, Optical and X-ray Photons

, Pages 125-148
Chapter 6 - Squid Magnetometers

, Pages 149-225
Chapter 1 - everlasting Magnet movies for Applications

, Pages 1-36
Chapter 2 - Magneto-Optical Recording skinny Films

, Pages 37-91
Chapter three - Epitaxial Garnet motion pictures for Nonreciprocal Magneto-Optic Devices

, Pages 93-141
Chapter four - Microwave Magnetic movie Devices

, Pages 143-184
Chapter five - Magnetic movies for Planar Inductive elements and Devices

, Pages 185-212
Chapter 1 - Ferroelectric skinny motion pictures: coaching and Characterization

, Pages 1-45
Chapter 2 - Ferroelectric Random entry reminiscence (feram) Technology

, Pages 47-77
Chapter three - prestige of Metal-Ferroelectric- Semiconductor box impact Transistors (MFSFETs) and similar Devices

, Pages 79-89
Chapter four - Integration elements of complex Ferroelectric Thin-Film Memories

, Pages 91-112
Chapter five - Tunable Dielectric fabrics and units for Broadband instant Communications

, Pages 113-142
Chapter 6 - Pyroelectric units and Applications

, Pages 143-202
Chapter 7 - Ferroelectric units for Microelectromechanical structures (mems) Applications

, Pages 203-226
Index for quantity I

, Pages 341-352
Index for quantity II

, Pages 363-372
Index for quantity III

, Pages 227-233
Index for quantity IV

, Pages 213-220
Index for quantity V

, Pages 227-235

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Extra info for Handbook of Thin Film Devices

Example text

Improvement that reduces materials consumption will help reduce overall costs. In MBE, using cracker sources to produce dimers improves the reaction efficiency of the group V by a factor of two. In MOCVD, decreasing the V/III ratio to the lowest feasible level will minimize hydride consumption. Moreover, having high alkyl (metalorganic) efficiency and an efficient wafer-packing density will ensure the maximum quantity of alkyls deposited on the wafers [92]. Cost of ownership (COO) models have shown that the largest system that is reasonably fully utilized usually results in the lowest epitaxial wafer cost [56].

Most of the modifications to reactors and the associated process have been developed empirically, but modeling efforts are beginning to shed some light on the important fundamentals. Simple modeling and flow visualization was a critical element in early MOCVD reactor design [57]. Modeling is used to find flow patterns that show no recirculation and temperature isotherms that are very uniform with a sharp temperature gradient perpendicular to substrate. Good uniformity of the temperature isotherms is necessary to achieve good compositional uniformity, and a sharp temperature gradient (or thin thermal boundary layer) allows the reactant gases to come close to the disk before pyrolyzing.

This cluster tool allows multiple chambers to operate simultaneously and complete different functions, which improves throughput. 4) to a manufacturing system requires that optical access must be provided to the wafers in the growth environment. Optical ports or windows are needed that do not become coated during the growth process and are positioned at the optimum angles. The technique must be insensitive to wafer motion because in batch reactors the wafers are either individually or collectively rotated to achieve improved uniformity.

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Handbook of Thin Film Devices by Maurice H. Francombe (Auth.)


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