By C.J. de Ranter, Michiel Steyaert
De Ranter (RF MAGIC, US) and Steyaert (KU Leuven, Belgium) describe layout strategies for complementary steel oxide semiconductor verbal exchange circuits, in particular oscillators and upconverters. The layout instruments defined are in keeping with topology-specific layout templates that may be used as a framework for automating layout techniques. the outline of upconverter layout is gifted as a regular case instance, because it begins from the marketplace point of view and runs via high-level topology layout, derivation of block-level necessities, description of ultimate circuits, and presentation of dimension effects.
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Extra resources for High Data Rate Transmitter Circuits
This figure thus encompasses both current and voltage gain, and includes all parasitics of a single device. Different expressions for this frequency exist, of which two are given here. The first one [Enz ACD99] relates directly to the physical gate resistance The second one [Leen 01] also includes the effect of the bulk resistance and the source/drain resistance: with the junction capacitance of the drain, the source resistance and the effective bulk resistance. 6 Summary A scalable model for a MOS device has been constructed based on available data of the technology provider and on a detailed study of the layout of a MOS transistor.
To implement all the other elements as depicted above, a subcircuit approach is used in accordance with [Enz ACD99] and [Leen 01]. From the MOSFET model as provided in the model files, an intrinsic MOST model is derived by nulling all layout-dependent elements. These include all series resistances in the model file, but also all parasitic junction capacitors. The latter are excluded, firstly because they depend on the physical layout of the transistor, secondly because the use of the “GEO”-option in Spice to indicate the use of a finger structure leads to an underestimation of the junction capacitances for a small number of fingers and finally because the implementation in BSIM3 does not allow for the addition of a bulk resistance network.
11 seems problematic. Put simple‚ the methods we can choose from for the parameter prediction of inductors used in this work are those with an “X” in the S8-column. Within an industrial environment‚ the financial cost associated with the processing of an inductor batch will seldom be a real burden if compared to the cost of a whole project. On the other hand‚ the high accuracy theoretically obtainable with the finite element method will only be certified after chip processing if the program is used in a proper way.
High Data Rate Transmitter Circuits by C.J. de Ranter, Michiel Steyaert