Download e-book for iPad: Introductory MEMS: Fabrication and Applications by Thomas M. Adams

By Thomas M. Adams

ISBN-10: 0387095101

ISBN-13: 9780387095103

ISBN-10: 038709511X

ISBN-13: 9780387095110

Introductory MEMS: Fabrication and Applications is a pragmatic creation to MEMS for complex undergraduate and graduate scholars. half I introduces the scholar to the main generic MEMS fabrication suggestions in addition to the MEMS units produced utilizing those suggestions. half II makes a speciality of MEMS transducers: ideas of operation, modeling from first ideas, and a close examine commercialized MEMS units, as well as microfluidics. a number of field-tested laboratory workouts are integrated, designed to facilitate pupil studying in regards to the basics of microfabrication procedures. References, advised analyzing, assessment questions, and homework difficulties are supplied on the shut of every chapter.

Introductory MEMS: Fabrication and Applications is a wonderful advent to the topic, with a established pedagogical constitution and an obtainable writing type appropriate for college students at a sophisticated undergraduate point throughout educational disciplines.

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Specifically, the notation (h k l) indicates a specific plane; {h k l} indicates a family of equivalent planes; [h k l] indicates a specific direction in the crystal; and indicates a family of equivalent directions. There is a simple three-step method to find the Miller indices of a plane: Chapter 2. The substrate and adding material to it 21 1. Identify where the plane of interest intersects the three axes forming the unit cell. Express this in terms of an integer multiple of the lattice constant for the appropriate axis.

In doping, x is usually the direction perpendicular to the surface of the wafer going into the wafer. The negative sign of Eq. 2) indicates that the flow of dopant material is in the direction of decreasing concentration. 2 It has dimensions of length squared divided by time. 38×10-23 J/K) and Ea is the activation energy, the minimum energy a diffusing atom must overcome in order to migrate. 2 gives of D0 and Ea for the diffusion of boron and phosphorus in silicon. 2. 66 The form of Ficks’s law of diffusion also applies to the transfer of heat and momentum within a material.

4) yields a Gaussian distribution, C ( x, t ) §  x2 exp¨¨ SDt © 4 Dt Q · §  x2 ¸¸ C s exp¨¨ ¹ © 4 Dt · ¸¸ . 11) The Gaussian distribution results from the fact that the concentration of ions at the surface is depleted as the diffusion continues. This is reflected in Eq. 11) in that the surface concentration is given by Cs = Q/(¥(ʌDt)). Doping by implantation In implantation a dopant in the form of an ion beam is delivered to the surface of a wafer via a particle accelerator. One may liken the process to throwing rocks into the sand at the beach.

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Introductory MEMS: Fabrication and Applications by Thomas M. Adams


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