New PDF release: Process and Device Simulation for MOS-VLSI Circuits

By Dimitri A. Antoniadis (auth.), Paolo Antognetti, Dimitri A. Antoniadis, Robert W. Dutton, William G. Oldham (eds.)

ISBN-10: 9400968426

ISBN-13: 9789400968424

ISBN-10: 9400968442

ISBN-13: 9789400968448

P. Antognetti college of Genova, Italy Director of the NATO ASI the foremost value of VLSI circuits is proven by way of the nationwide efforts during this box happening in different nations at range­ ent degrees (government organisations, inner most industries, protection de­ partments). end result of the evolution of IC expertise over the last twenty years, part complexi ty has elevated from one unmarried to over 400,000 transistor capabilities according to chip. low-budget of such unmarried chip platforms is just attainable through lowering layout fee in step with functionality and keeping off expense consequences for layout mistakes. for this reason, computing device simulation instruments, in any respect degrees of the layout procedure, became an absolute necessity and a cornerstone within the VLSI period, rather as experimental investigations are very time-consuming, frequently too pricey and infrequently under no circumstances possible. As minimal machine dimensions decrease, the necessity to comprehend the fabrication procedure in a quanti tati ve approach turns into severe. fantastic styles, skinny oxide layers, polycristalline silicon interco~ nections, shallow junctions and threshold implants, every one develop into extra delicate to procedure diversifications. each one of those applied sciences alterations towards finer buildings calls for elevated realizing of the method physics. additionally, the tighter specifications for strategy keep watch over make it relevant that sensitivities be unde~ stood and that optimation be used to reduce the impression of sta­ tistical fluctuations.

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Additional resources for Process and Device Simulation for MOS-VLSI Circuits

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Hu, Atomic Diffusion in Semiconductors (D. ), Plenum Press, New York, 197~ Chapter 5. 11. J. A. Van Vechten and C. D. Thurmond, Phys. Rev. B, 1976. li, 3539, 12. F. J. Morin and J. P. Naita, Phys. , 966, 28,1954. 13. G. Hettich, H. Hehrer and K. Maier, in Defects and Radiation Effects in Semiconductors,1978 (J. ), Conference Series Number 46, The Institute of Physics, Bristoe and London, 500, 1979. 14. J. Stiegman, W. Schockley, and F. C. Nix, Phys. Rev, 1939. 15. R. P. Johnson, Phys. , 56, 814, 1939.

For example. the only way that an electric 32 field could affect diffusivity is by increasing the jump rates in one direction while decreasing the jump rates in the opposite direction; presumably it can do that by correspondingly lowering and raising the potential barriers (see Fig. 8) in the two directions thus essentially giving rise to anisotropic migration energy. How exactly to model this effect and how to take into consideration the various charged states of point defects is not immediately obvious.

26), (27) and (28) yields: 12 DAv % IF evvNvexp (Eb kT- ~E) (29) Remembering that the self-diffusion coefficient, tiple vacancy charge states, is given by ignoring mul(30) it is obvious that the pre-exponential factor for DAv. will be smaller than the same for Os by approximately e, ano that the activation energy will be Vower by Eb - ~E. The constant e arises from the lattice yernnetrical structure part of the contribution to the correlation factor and should normally be of the order of unity.

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Process and Device Simulation for MOS-VLSI Circuits by Dimitri A. Antoniadis (auth.), Paolo Antognetti, Dimitri A. Antoniadis, Robert W. Dutton, William G. Oldham (eds.)

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